Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth

被引:85
作者
Izumi, Shouichiro [1 ]
Fuutagawa, Noriyuki [1 ]
Hamaguchi, Tatsushi [1 ]
Murayama, Masahiro [1 ]
Kuramoto, Masaru [1 ]
Narui, Hironobu [1 ]
机构
[1] Sony Corp, Compound Semicond Dev Dept, Semicond Device Dev Div, Atsugi, Kanagawa 2430014, Japan
关键词
DIODES;
D O I
10.7567/APEX.8.062702
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have successfully demonstrated the room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers (VCSELs) with all-dielectric reflectors, which were fabricated using epitaxial lateral overgrowth. The VCSELs exhibited a threshold current of 8 mA and a threshold voltage of 4.5 V at a lasing wavelength of 446 nm. The maximum output power was 0.9 mW for an 8-mu m-diameter current aperture, which was made possible because of the high thermal conductivity of the GaN substrate. (C) 2015 The Japan Society of Applied Physics
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页数:3
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