Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition

被引:17
作者
Jaramillo, Rafael [2 ,4 ]
Steinmann, Vera [1 ,2 ]
Yang, Chuanxi [3 ]
Hartman, Katy [2 ,4 ]
Chakraborty, Rupak [1 ,2 ]
Poindexter, Jeremy R. [2 ,4 ]
Castillo, Mariela Lizet [2 ]
Gordon, Roy [5 ]
Buonassisi, Tonio [1 ,2 ]
机构
[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA
[2] MIT, Lab Mfg & Prod, Cambridge, MA 02139 USA
[3] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA
[4] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[5] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA
来源
JOVE-JOURNAL OF VISUALIZED EXPERIMENTS | 2015年 / 99期
基金
美国国家科学基金会;
关键词
Engineering; Issue; 99; Solar cells; thin films; thermal evaporation; atomic layer deposition; annealing; tin sulfide; THIN-FILMS;
D O I
10.3791/52705
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent thermal evaporation, and it absorbs visible light strongly. However, for a long time the record power conversion efficiency of SnS solar cells remained below 2%. Recently we demonstrated new certified record efficiencies of 4.36% using SnS deposited by atomic layer deposition, and 3.88% using thermal evaporation. Here the fabrication procedure for these record solar cells is described, and the statistical distribution of the fabrication process is reported. The standard deviation of efficiency measured on a single substrate is typically over 0.5%. All steps including substrate selection and cleaning, Mo sputtering for the rear contact (cathode), SnS deposition, annealing, surface passivation, Zn(O,S) buffer layer selection and deposition, transparent conductor (anode) deposition, and metallization are described. On each substrate we fabricate 11 individual devices, each with active area 0.25 cm(2). Further, a system for high throughput measurements of current-voltage curves under simulated solar light, and external quantum efficiency measurement with variable light bias is described. With this system we are able to measure full data sets on all 11 devices in an automated manner and in minimal time. These results illustrate the value of studying large sample sets, rather than focusing narrowly on the highest performing devices. Large data sets help us to distinguish and remedy individual loss mechanisms affecting our devices.
引用
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页数:20
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