A 30W, 46% PAE S-Band GaN HEMT MMIC Power Amplifier for Radar Applications

被引：0
|
作者：
Jardel, O. [1 ]
Olivier, M.
Lancereau, D. [1 ]
Aubry, R. [1 ]
Chartier, E. [1 ]
Sarazin, N. [1 ]
Poisson, M. -A. Di Forte [1 ]
Piotrowicz, S. [1 ]
Stanislawiak, M.
Rimbert, D.
Delage, S. L. [1 ]
Eudeline, P.
机构：
[1] III V Lab, Marcoussis, France
来源：
2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年
关键词：
GaN HEMT; S-Band; Amplifier; pulse to pulse stability;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper deals with the performances of 30 W GaN HEMT MMIC power amplifiers designed for Radar applications in S-band. These amplifiers deliver 30 W, 46% PAE with similar to 20 dB power gain in the [2.7 - 3.7 GHz] frequency band, and 34W, 50% PAE with similar to 20.5 dB power gain in the [2.9 - 3.5GHz] frequency band, in pulsed conditions (50 mu s/10%). The device processing and the transistor performances are presented, as well as the design and the characterizations of the amplifiers. Pulse to pulse stability measurements were also carried out in order to evaluate their behavior under radar waveforms constraints.
引用
收藏
页码：639 / 642
页数：4
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