A 30W, 46% PAE S-Band GaN HEMT MMIC Power Amplifier for Radar Applications

被引：0
|
作者：
Jardel, O. [1 ]
Olivier, M.
Lancereau, D. [1 ]
Aubry, R. [1 ]
Chartier, E. [1 ]
Sarazin, N. [1 ]
Poisson, M. -A. Di Forte [1 ]
Piotrowicz, S. [1 ]
Stanislawiak, M.
Rimbert, D.
Delage, S. L. [1 ]
Eudeline, P.
机构：
[1] III V Lab, Marcoussis, France
来源：
2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年
关键词：
GaN HEMT; S-Band; Amplifier; pulse to pulse stability;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper deals with the performances of 30 W GaN HEMT MMIC power amplifiers designed for Radar applications in S-band. These amplifiers deliver 30 W, 46% PAE with similar to 20 dB power gain in the [2.7 - 3.7 GHz] frequency band, and 34W, 50% PAE with similar to 20.5 dB power gain in the [2.9 - 3.5GHz] frequency band, in pulsed conditions (50 mu s/10%). The device processing and the transistor performances are presented, as well as the design and the characterizations of the amplifiers. Pulse to pulse stability measurements were also carried out in order to evaluate their behavior under radar waveforms constraints.
引用
收藏
页码：639 / 642
页数：4
相关论文
共 50 条
  • [21] An S-band 240 W Output/54 % PAE GaN Power Amplifier with Broadband Output Matching Network for both Fundamental and 2nd Harmonic Frequencies
    Yoshioka, Takaaki
    Kosaka, Naoki
    Hangai, Masatake
    Yamanaka, Koji
    2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2016,
  • [22] A Ka-band Wideband Power Synthesis Power Amplifier MMIC Utilizing Advanced 0.15 μm GaN HEMT Technology
    Ding, Zhenkai
    Yi, Chupeng
    Lu, Yang
    Ma, Xiaohua
    PROCEEDINGS OF 2023 THE 12TH INTERNATIONAL CONFERENCE ON NETWORKS, COMMUNICATION AND COMPUTING, ICNCC 2023, 2023, : 162 - 167
  • [23] Design of 70% PAE Class-F 1.2-1.4 GHz 10 W GaN power amplifier MMIC
    Zhang, Lu-Chuan
    Shi, Long-Xing
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2022, 64 (04) : 670 - 675
  • [24] An E band MMIC power amplifier design using 100 nm T-Gate GaN HEMT on SiC
    Jin, Liwei
    Cheng, Zhiqun
    Wang, Yonghui
    Liu, Guohua
    INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2024, 52 (08) : 4129 - 4139
  • [25] High Power-Handling GaN Switch for S-band Applications
    Polli, G.
    Palomba, M.
    Colangeli, S.
    Vittori, M.
    Limiti, E.
    PROCEEDINGS OF 2017 INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC 2017), 2017,
  • [26] A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT
    Zheng Jia-Xin
    Ma Xiao-Hua
    Lu Yang
    Zhao Bo-Chao
    Zhang Hong-He
    Zhang Meng
    Cao Meng-Yi
    Hao Yue
    CHINESE PHYSICS B, 2015, 24 (10)
  • [27] A novel nonlinear large-signal statistical model of GaN HEMT used in S-band power amplifier design and yield estimation
    Chen, Zhikai
    Xu, Yuehang
    Wang, Changsi
    Wen, Zhang
    Rong, Chuicai
    Xu, Ruimin
    INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2017, 30 (01)
  • [28] Design of X-band 40 W Pulse-Driven GaN HEMT Power Amplifier
    Jeong, Hae-Chang
    Oh, Hyun-Seok
    Ahmed, Abdul-Rahman
    Yeom, Kyung-Whan
    2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012), 2012, : 466 - 468
  • [29] InAlGaN/GaN-HEMT Device Technologies for W-band High-Power Amplifier
    Makiyama, K.
    Ozaki, S.
    Niida, Y.
    Ohki, T.
    Okamoto, N.
    Minoura, Y.
    Sato, M.
    Kamada, Y.
    Joshin, K.
    Watanabe, K.
    Miyamoto, Y.
    PROCEEDINGS OF THE 25TH BIENNIAL LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC), 2016, : 31 - 34
  • [30] A Design of X-Band 40 W Pulse-Driven GaN HEMT Power Amplifier
    Jeong, Hae-Chang
    Yeom, Kyung-Whan
    IEICE TRANSACTIONS ON ELECTRONICS, 2013, E96C (06): : 923 - 934
12345