High-Frequency Three-Phase Interleaved LLC Resonant Converter With GaN Devices and Integrated Planar Magnetics

被引:123
作者
Fei, Chao [1 ]
Gadelrab, Rimon [1 ]
Li, Qiang [1 ]
Lee, Fred C. [1 ]
机构
[1] Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USA
关键词
Gallium nitride (GaN); high-frequency transformer; interleaving; LLC resonant converter; magnetic integration; MODE EMI NOISE; DIGITAL IMPLEMENTATION; DC CONVERTER; DESIGN; EFFICIENCY; TRANSFORMER;
D O I
10.1109/JESTPE.2019.2891317
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The LLC converter is deemed the most widely used topology as dc/dc converter in server and telecom applications. To increase the output power and reduce the input and output current ripples, three-phase interleaved LLC converter is becoming more and more popular. It has been demonstrated that three interleaved LLC converter can achieve further efficiency improvement at the 3-kW power level. However, the magnetic components for multiphase LLC converter are complex, bulky, and difficult to manufacture in a cost-effective manner. In this paper, a high-frequency gallium nitride (GaN)-based three-phase LLC converter is employed to address these aforementioned challenges. With GaN operating at 1 MHz, all magnetic components, namely, three inductors and three transformers, can be integrated into one common structure while all magnetic windings implemented in a compact four-layer PCB with 3-oz copper. The proposed structure can be easily manufactured cost-effectively in high quality. Furthermore, shielding techniques for full-bridge secondary have been investigated, and additional two-layer shielding has been integrated to reduce common-mode noise. A 1-MHz 3-kW 400 V/48 V three-phase LLC converter is demonstrated, and the peak efficiency of 97.7% and power density of 600 W/in(3) (37 kW/L) are achieved.
引用
收藏
页码:653 / 663
页数:11
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