RETRACTED: Investigation of structural, optical and electronic properties in Al-Sn co-doped ZnO thin films (Retracted article. See vol. 469, pg. 1021, 2019)

被引:49
|
作者
Pan, Zhanchang [1 ]
Tian, Xinlong [1 ]
Wu, Shoukun [2 ]
Yu, Xia [1 ]
Li, Zhuliang [2 ]
Deng, Jianfeng [2 ]
Xiao, Chumin [1 ]
Hu, Guanghui [1 ]
Wei, Zhigang [1 ]
机构
[1] Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China
[2] Huizhou King Brother Elect Technol Co Ltd, Huizhou 516083, Peoples R China
基金
中国国家自然科学基金;
关键词
Al-Sn co-doped ZnO; XPS; Optical bandgap; Sol-gel method; TEMPERATURE; GROWTH; TRANSPARENT; PHOTOLUMINESCENCE; NANOSTRUCTURES; CONDUCTIVITY; EMISSION; CE;
D O I
10.1016/j.apsusc.2012.11.139
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Al-Sn co-doped ZnO (ATZO) nanocrystals were successfully synthesized onto glass substrates by the sol-gel processing. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The results indicated that co-doped ZnO films showed a preferred orientation toward the c-axis and the full width at half maximum (FWHM) of the (0 0 2) plane increased first and then decreased, reaching a minimum of about 0.213 with Sn concentration of 2%. The effects of various Sn concentrations on electrical and optical properties were also investigated by 4-point probe device and ultraviolet-visible (UV-vis) spectroscopy, respectively. The X-ray photoelectron spectroscopy (XPS) study showed Sn-O and Al-O bonding in the synthesized co-doped ZnO thin films, which confirmed the substitution of Zn2+ by Sn and Al ions. Room temperature photoluminescence (PL) was observed for pure and co-doped ZnO thin films and the origin of these emissions was discussed. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:870 / 877
页数:8
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