共 45 条
RETRACTED: Investigation of structural, optical and electronic properties in Al-Sn co-doped ZnO thin films (Retracted article. See vol. 469, pg. 1021, 2019)
被引:49
作者:

Pan, Zhanchang
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机构:
Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China

Tian, Xinlong
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Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China

Wu, Shoukun
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机构:
Huizhou King Brother Elect Technol Co Ltd, Huizhou 516083, Peoples R China Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China

Yu, Xia
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Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China

Li, Zhuliang
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Huizhou King Brother Elect Technol Co Ltd, Huizhou 516083, Peoples R China Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China

Deng, Jianfeng
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Huizhou King Brother Elect Technol Co Ltd, Huizhou 516083, Peoples R China Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China

Xiao, Chumin
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h-index: 0
机构:
Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China

Hu, Guanghui
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机构:
Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China

Wei, Zhigang
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h-index: 0
机构:
Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China
机构:
[1] Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China
[2] Huizhou King Brother Elect Technol Co Ltd, Huizhou 516083, Peoples R China
基金:
中国国家自然科学基金;
关键词:
Al-Sn co-doped ZnO;
XPS;
Optical bandgap;
Sol-gel method;
TEMPERATURE;
GROWTH;
TRANSPARENT;
PHOTOLUMINESCENCE;
NANOSTRUCTURES;
CONDUCTIVITY;
EMISSION;
CE;
D O I:
10.1016/j.apsusc.2012.11.139
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Al-Sn co-doped ZnO (ATZO) nanocrystals were successfully synthesized onto glass substrates by the sol-gel processing. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The results indicated that co-doped ZnO films showed a preferred orientation toward the c-axis and the full width at half maximum (FWHM) of the (0 0 2) plane increased first and then decreased, reaching a minimum of about 0.213 with Sn concentration of 2%. The effects of various Sn concentrations on electrical and optical properties were also investigated by 4-point probe device and ultraviolet-visible (UV-vis) spectroscopy, respectively. The X-ray photoelectron spectroscopy (XPS) study showed Sn-O and Al-O bonding in the synthesized co-doped ZnO thin films, which confirmed the substitution of Zn2+ by Sn and Al ions. Room temperature photoluminescence (PL) was observed for pure and co-doped ZnO thin films and the origin of these emissions was discussed. (C) 2012 Elsevier B.V. All rights reserved.
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收藏
页码:870 / 877
页数:8
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