Room temperature anomalous Hall effect in Co doped ZnO thin films in the semiconductor regime

被引：28
作者：
Hsu, H. S.
Lin, C. P.
Chou, H. [1 ]
Huang, J. C. A. [2 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
[2] Natl Cheng Kung Univ, Dept Phys, Tainan 701, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 14期
关键词：
D O I：
10.1063/1.3000015
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Observation of the room temperature (RT) anomalous Hall effect (AHE) and ferromagnetism in semiconducting like (carrier concentration similar to 10(19) cm(-3)) Co-doped ZnO samples is reported. These small AHE signals match quantitatively with the magnetic hysteresis and can be correspondent to the intrinsic diluted magnetic oxide (DMO) effect with spin polarized carriers. The contribution to the DMO effect depends on the types of carriers and how they incorporated into the electric conduction, magnetic coupling, and the coupling between them. These findings can provide useful information in the study of the origin of RT ferromagnetism in ZnO-based DMO and for further application in spintronics. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000015]
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页数：3
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