Wideband CMOS amplifier design: Time-domain considerations

被引：34
|
作者：
Walling, Jeffrey S. [1 ]
Shekhar, Sudip [1 ]
Allstot, David J. [1 ]
机构：
[1] Univ Washington, Dept Elect Engn, Seattle, WA 98195 USA
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2008年 / 55卷 / 07期
基金：
美国国家科学基金会;
关键词：
bandwidth extension; low power; peaking; setting time; T-coil; transformer; transient; wireline;
D O I：
10.1109/TCSI.2008.926977
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Time-domain responses of wideband CMOS amplifiers using several inductive peaking techniques are presented. Transient performance considerations are described, including the effects of transistor parasitics on settling and edge rates. A combination of time- and frequency-domain performance is derived for a given bandwidth extension technique, and tradeoffs are discussed. Measured results for several high-speed high-gain single-stage amplifiers are presented in 0.18-mu m CMOS, and a design strategy for multistage amplifiers is introduced. Finally, design and simulation results are presented for a multistage amplifier in 0.18-mu m CMOS that attains a bandwidth of 22.7 GHz with 14.7-dB voltage gain, operates at 40 Gb/s, and consumes 93.6 mW.
引用
收藏
页码：1781 / 1793
页数：13
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