Improved quantum efficiency of InGaAs/InP photodetectors using Ti/Au-SiO2 phase-matched-layer reflector

被引：8

作者：

Yuan, Jinrong ^{[1
]}

Chen, Baile ^{[1
]}

Holmes, A. L., Jr. ^{[1
]}

机构：

[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

来源：

ELECTRONICS LETTERS | 2012年 / 48卷 / 19期

基金：

美国国家科学基金会;

关键词：

Silica - Photons - Gold compounds - Mirrors - Reflection - Titanium compounds - Quantum efficiency - Semiconducting indium gallium arsenide;

D O I：

10.1049/el.2012.0806

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The quantum efficiency of an InGaAs/InP photodetector has increased from 50 to 70.2% at lambda = 1550 nm by applying a Ti/Au reflector with a SiO2 phase-matched-layer at the back of the device. The ultra-broadband mirror has a simple fabrication process and promising reflectivity (97.9% for the reference and 79% for the InGaAs/InP photodetector). These results are comparable to the other more commonly used high-reflectivity mirrors.

引用

页码：1230 / U87

页数：2

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