Hybrid graphene/organic semiconductor field-effect transistors

被引：29

作者：

Ha, Tae-Jun ^{[1
]}

Akinwande, Deji ^{[1
]}

Dodabalapur, Ananth ^{[1
]}

机构：

[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 03期

基金：

美国国家科学基金会;

关键词：

BAND-GAP;

D O I：

10.1063/1.4737939

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report on the improvement of the electronic properties of graphene by capping with pi-conjugated organic semiconductor molecules. The off-state current is reduced while the on-state current and mobility are either unaffected or increased. The semiconductors employed included alpha-sexithiophene and hexadecafluorocopperphthallocyanine. Removal of the organic semiconductor layer results in a return to the original electronic properties. This suggests that weak electronic interactions with organic semiconductors can be a promising approach to favorably alter the transport properties of graphene. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737939]

引用

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