SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-micron CMOS Process and Design

被引：12

作者：

Fitzgerald, E. A. ^{[1
,2
]}

Lee, K. E. ^{[1
]}

Yoon, S. F. ^{[1
,3
]}

Chua, S. J. ^{[1
,4
]}

Tan, C. S. ^{[1
,3
]}

Ng, G., I ^{[1
,3
]}

Zhou, X. ^{[1
,3
]}

Gong, X. ^{[1
,4
]}

Chang, J. S. ^{[1
,3
]}

Peh, L. S. ^{[1
,2
]}

Boon, C. C. ^{[1
,3
]}

Antoniadis, D. A. ^{[1
,2
]}

Yadav, S. ^{[1
,4
]}

Nguyen, X. S. ^{[1
]}

Kohen, D. A. ^{[1
]}

Annie ^{[1
,4
]}

Zhang, L. ^{[1
]}

Lee, K. H. ^{[1
]}

Liu, Z. H. ^{[1
]}

Chiah, S. B. ^{[1
,3
]}

Ge, T. ^{[1
,3
]}

Choi, P. ^{[1
,2
]}

机构：

[1] Singapore MIT Alliance Res & Technol, Singapore, Singapore

[2] MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA

[3] Nanyang Technol Univ, Singapore, Singapore

[4] Natl Univ Singapore, Singapore, Singapore

来源：

SIGE, GE, AND RELATED MATERIALS: MATERIALS, PROCESSING, AND DEVICES 7 | 2016年 / 75卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

MOBILITY;

D O I：

10.1149/07508.0439ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have established new methodologies, materials, processing, devices, and circuits for integrating III-V devices monolithically into CMOS circuits. Certain constraints were applied on this research from the start in order to converge on viable commercial strategies as the research moves closer to a path for new innovation in the semiconductor industry. Integration technology has been established for incorporating HEMTs and LEDs into CMOS integrated circuits, and both nitride-based and arsenic-phosphide-based materials are currently supported. Device models are inserted into standard foundry design libraries, allowing silicon technology efficiencies such as exploring various circuit designs before final physical silicon and fabrication-test feedback loops using test chip designs.

引用

页码：439 / 446

页数：8

共 4 条

[1] RELAXED GEXSI1-X STRUCTURES FOR III-V INTEGRATION WITH SI AND HIGH MOBILITY 2-DIMENSIONAL ELECTRON GASES IN SI
FITZGERALD, EA
XIE, YH
MONROE, D
SILVERMAN, PJ
KUO, JM
KORTAN, AR
THIEL, FA
WEIR, BE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1807 - 1819
[2] Isaacson DM, 2005, MATER RES SOC SYMP P, V836, P235
[3] The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD - Application to a 200 mm GaAs virtual substrate
Kohen, David
Bao, Shuyu
Lee, Kwang Hong
Lee, Kenneth Eng Kian
Tan, Chuan Seng
Yoon, Soon Fatt
Fitzgerald, Eugene A.
[J]. JOURNAL OF CRYSTAL GROWTH, 2015, 421 : 58 - 65
[4] EXTREMELY HIGH ELECTRON-MOBILITY IN SI/GEXSI1-X STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
MII, YJ
XIE, YH
FITZGERALD, EA
MONROE, D
THIEL, FA
WEIR, BE
FELDMAN, LC
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (13) : 1611 - 1613

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