Photo and thermal induced Bi2Se3 formation from Bi/GeSe2 hetero junction layer for topological insulator

In the present paper, we report the evolution of Bi2Se3 topological phase from the Bi diffusion into GeSe(2 )layer in the Bi/GeSe(2 )hetero junction film with light and thermal energy. The photo and thermal induced changes in the structural and optical properties of thermally evaporated Bi/GeSe2 bilayer film has been studied by various characterization techniques. The amorphous to crystalline phase transition and the formation of Bi2Se3 topological phase was confirmed from the X-ray diffraction analysis. The deposition as well as diffusion of Bi into GeSe2 layer changed the optical constants like transmitivity, absorption power, optical band gap, Urbach energy, Tauc parameter as studied from UV-Vis-NIR spectroscopy. The transmission power decreased after thermal annealing and laser irradiation where the reverse effect was found in case of absorption coefficient. The optical band gap decreased after diffusion which can be explained on the basis of density of defect states with an increase in disorder. Scanning electron microscopy investigations showed that the surface morphology was influenced by the diffusion phenomena. The Raman analysis also confirms the Bi(2)Se(3 )phase evolution with appropriate vibrational peaks. The modifications in optical parameters with thermal and light induced diffusion can be used in various optical applications using such metal/chalcogenides heterojunction layers.