Thermal conductivity of sputtered amorphous Ge films

被引：21

作者：

Zhan, Tianzhuo ^{[1
]}

Xu, Yibin ^{[1
]}

Goto, Masahiro ^{[1
]}

Tanaka, Yoshihisa ^{[1
]}

Kato, Ryozo ^{[1
]}

Sasaki, Michiko ^{[1
]}

Kagawa, Yutaka ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

AIP ADVANCES | 2014年 / 4卷 / 02期

关键词：

SOLIDS; CRYSTALS; GLASSES; SILICON; HEAT; TEMPERATURE;

D O I：

10.1063/1.4867122

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

引用

页数：7

共 25 条

[1] PHONON-FRACTON ANHARMONIC INTERACTIONS - THE THERMAL-CONDUCTIVITY OF AMORPHOUS MATERIALS [J].