The Impact of High Dielectric Permittivity of 2-D Numerical Modeling Nanoscale SOI Double-Gate Mosfet Using Nextnano Simulator

被引：0

作者：

Slimani, Samia ^{[1
]}

Djellouli, Bouaza ^{[1
]}

机构：

[1] Univ Saida, Dept Elect, Fac Sci, LMMC, Saida, Algeria

来源：

CENICS 2011: THE FOURTH INTERNATIONAL CONFERENCE ON ADVANCES IN CIRCUITS, ELECTRONICS AND MICRO-ELECTRONICS | 2011年

关键词：

high-k; DG-MOSFET; quantum effects; nextnano3d; modeling;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Performance of high-k Double-Gate SOI MOSFETs is studied and compared to silicon dioxide based devices. This is achieved by computing variation of threshold voltage, swing subthreshold, leakage current and drain-induced barrier lowering (DIBL) with respect to different gate bias (VG) when gate length (LG) decreases. This comparison is pinpointed taking SiO2 and HfO2 as gate oxides. Furthermore, quantum effects on the performance of DG MOSFETs are discussed. It is observed that less EOT with high permittivity reduces the tunnel current and serves to maintain high drive current, when compared with device using SiO2 dielectric. Our results show that the characteristics of SOI Double Gate MOSFET with HfO2 are superior to that of a device with SiO2 dielectric

引用

页码：38 / 41

页数：4

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