HfO2-based Ferroelectric Field-Effect Transistors with 260 nm channel length and long data retention

被引:0
作者
Yurchuk, Ekaterina [1 ]
Mueller, Johannes [2 ]
Hoffmann, Raik [2 ]
Paul, Jan [2 ]
Martin, Dominik [1 ]
Boschke, Roman [3 ]
Schloesser, Till [3 ]
Mueller, Stefan [1 ]
Slesazeck, Stefan [1 ]
van Bentum, Ralf [3 ]
Trentzsch, Martin [3 ]
Schroeder, Uwe [1 ]
Mikolajick, Thomas [1 ]
机构
[1] NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany
[2] Fraunhofer Cancer Nanoelect Technol, D-01099 Dresden, Germany
[3] GLOBALFOUNDRIES Dresden Module one LLC& Co KG, D-01109 Dresden, Germany
来源
2012 4TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW) | 2012年
关键词
FeFET; ferroelectric; hafnium oxide;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
We report the fabrication of highly scaled sub-0.3 mu m ferroelectric field-effect transistors on the basis of ferroelectric HfO2. The electrical properties of 9 nm thick Si-doped HfO2 films depending on the silicon content and the annealing temperature were investigated. The most suitable fabrication conditions for the emergence of ferroelectricity were identified. The ferroelectric properties were verified up to temperatures of 170 degrees C. N-channel MFIS-FETs (Metal-Ferroelectric-Insulator-Semiconductor Field-Effect Transistors) with poly-Si/TiN/Si:HfO2/SiO2/Si gate stack and channel lengths down to 260 nm were successfully fabricated. The switching characteristics, endurance and retention properties were analysed. Switching times of 10 ns were demonstrated. A memory window of 1.2 V was obtained with program/erase voltages of -6.5 V and +4 V and pulses as short as 50 ns. Endurance performance of up to 10(4) cycles was verified. Retention characteristics were measured at 25 degrees C and 150 degrees C. 10 years data retention was indicated for both temperatures by the extrapolation of the experimental data.
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页数:4
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