Next generation nanolithography based on Ru/Be and Rh/Sr multilayer optics

被引：65

作者：

Chkhalo, N. I. ^{[1
]}

Salashchenko, N. N. ^{[1
]}

机构：

[1] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

AIP ADVANCES | 2013年 / 3卷 / 08期

关键词：

X-RAY; EUV SOURCE; 6.7; NM; LITHOGRAPHY; EXTREME; MIRRORS;

D O I：

10.1063/1.4820354

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A prospective move to 10.5 and 11.2 nm wavelengths, as an alternative to 6.7 and 13.5 nm, for next generation nanolithography is discussed. Ten-mirror optical systems based on Ru/Be, Mo/Be, Rh/Sr, Mo/Si, and La/B multilayers were compared for efficiency at their working wavelengths. It is shown that a transition to 10.5 nm and 11.2 nm may be a solution to the problem of increasing performance and resolution of a projection system. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

引用

页数：9