Next generation nanolithography based on Ru/Be and Rh/Sr multilayer optics

被引：65
|
作者：
Chkhalo, N. I. [1 ]
Salashchenko, N. N. [1 ]
机构：
[1] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
AIP ADVANCES | 2013年 / 3卷 / 08期
关键词：
X-RAY; EUV SOURCE; 6.7; NM; LITHOGRAPHY; EXTREME; MIRRORS;
D O I：
10.1063/1.4820354
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A prospective move to 10.5 and 11.2 nm wavelengths, as an alternative to 6.7 and 13.5 nm, for next generation nanolithography is discussed. Ten-mirror optical systems based on Ru/Be, Mo/Be, Rh/Sr, Mo/Si, and La/B multilayers were compared for efficiency at their working wavelengths. It is shown that a transition to 10.5 nm and 11.2 nm may be a solution to the problem of increasing performance and resolution of a projection system. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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收藏
页数：9
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