Effect of C incorporation on relaxation of SiGe/Si

被引：5

作者：

Kim, H. -W. ^{[1
]}

Choi, S. ^{[1
]}

Hong, S. ^{[1
]}

Jung, H. K. ^{[1
]}

Lee, G. -D. ^{[1
]}

Yoon, E. ^{[1
]}

Kim, C. S. ^{[2
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

[2] Korea Res Inst Stand & Sci, Adv Technol Div, Taejon 305340, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 22期

关键词：

annealing; carbon; CVD coatings; dislocation density; dislocation pile-ups; elemental semiconductors; Ge-Si alloys; interstitials; semiconductor doping; semiconductor heterojunctions; semiconductor materials; silicon; stress relaxation;

D O I：

10.1063/1.3040308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin fully strained Si1-xGex/Si1-x-yGexCy/Si1-xGex heterostructures (x=0.2), with controlled C incorporation sites, were grown on Si substrates using ultrahigh vacuum chemical vapor deposition. Following the growth, layers were relaxed using rapid thermal annealing at 1000 degrees C for 30 s, and high degrees of relaxation of 65% and 59% were achieved with and without interstitial C, respectively. We show that the difference in cross hatch density and step height between two samples, which correspond to different misfit dislocation pileup behaviors, suggests controllability of SiGe relaxation via variation in C incorporation sites in the SiGeC layer.

引用

页数：3

共 17 条

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