Measurement of indium concentration profiles and segregation efficiencies from high-angle annular dark field-scanning transmission electron microscopy images

被引：15

作者：

Mehrtens, Thorsten ^{[1
]}

Mueller, Knut ^{[1
]}

Schowalter, Marco ^{[1
]}

Hu, Dongzhi ^{[2
]}

Schaadt, Daniel M. ^{[2
,3
]}

Rosenauer, Andreas ^{[1
]}

机构：

[1] Univ Bremen, Inst Festkorperphys, D-28359 Bremen, Germany

[2] Tech Univ Clausthal, Energieforschungszentrum Niedersachsen, D-38640 Goslar, Germany

[3] Tech Univ Clausthal, Inst Energieforschung & Phys Technol, D-38640 Goslar, Germany

来源：

ULTRAMICROSCOPY | 2013年 / 131卷

关键词：

HAADF-STEM; InGaAs; Composition analysis; Segregation; CELFA; SURFACE SEGREGATION; III-V; GROWTH; ENERGY; GAAS; ALXGA1-XAS; CRYSTALS;

D O I：

10.1016/j.ultramic.2013.03.018

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

We investigated segregation of indium in an InxGa1-xAs/GaAs heterostructure via high-angle annular dark field-scanning transmission electron microscopy (HAADF-STEM), where contrast strongly depends on the nuclear charges of the scattering atoms (Z-contrast). Indium concentration maps have been deduced from HAADF-STEM images by comparing normalized measured intensities with multislice simulations in the frozen lattice approach. Segregation coefficients were derived following the segregation model of Muraki et al. [1]. This is demonstrated for HAADF-STEM images recorded in [100] and [110] zone-axes. Determined indium concentrations and segregation coefficients are compared with results from composition analysis by lattice fringe analysis (CELFA) measurements and energy-dispersive X-ray analysis (EDX). (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：1 / 9

页数：9

共 34 条

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