Field emission characteristics of BN/GaN structure

被引：36

作者：

Kimura, C ^{[1
]}

Yamamoto, T ^{[1
]}

Hori, T ^{[1
]}

Sugino, T ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 27期

关键词：

D O I：

10.1063/1.1427755

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

n-type gallium nitride (GaN) layers grown on sapphire substrates by metalorganic chemical vapor deposition are used to examine field emission characteristics. The electron concentration of the GaN is 2x10(17) cm(-3). In order to enhance the electric field, the GaN surface is roughened by hydrogen (H-2) plasma treatment. Boron nitride (BN) films are grown on the roughened surface of the GaN by plasma-assisted chemical vapor deposition. The turn-on electric field between the anode and sample surface is estimated to be 12.4 and 8.8 V/mum from the field emission characteristics of the roughened GaN and the BN/GaN samples, respectively. It is demonstrated that BN coating is effective in improving the field emission characteristics. (C) 2001 American Institute of Physics.

引用

页码：4533 / 4535

页数：3

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