Effect of thermocouple position on temperature field in nitride MOCVD reactor

被引：14

作者：

Li, Zhiming ^{[1
]}

Li, Jinping ^{[1
]}

Jiang, Haiying ^{[1
]}

Han, Yanbin ^{[1
]}

Yin, Jianqin ^{[1
]}

Xia, Yingjie ^{[1
]}

Chang, Yongming ^{[2
]}

Zhang, Jincheng ^{[2
]}

Hao, Yue ^{[2
]}

机构：

[1] Univ Jinan, Sch Informat Sci & Engn, Shandong Prov Key Lab Network Based Intelligent C, Jinan 250022, Shandong, Peoples R China

[2] Xidian Univ, Sch Microelect, Key Lab Fundamental Sci Natl Def Wide Band Gap Se, Xian 710071, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 368卷

关键词：

Electromagnetic field; Finite element analysis; Induction heat; MOCVD; Temperature field; HEAT-TRANSFER; TRANSPORT PHENOMENA; GROWTH-RATE; FLOW; CONVECTION; RADIATION;

D O I：

10.1016/j.jcrysgro.2013.01.005

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

By using finite element methods, the distribution of temperature field is simulated in the vertical MOCVD reactor heated by induction. The temperature of thermocouple obtained from the experiment is consistent with that from the simulation. And the effect of the position of the thermocouple within the susceptor on the temperature in susceptor and wafer is analyzed in detail. It is found that the height of the thermocouple has little effect on the heating efficiency, but has strong influence on the wafer temperature measured by the thermocouple. The height of the thermocouple is optimized and the optimal position of the thermocouple in the susceptor is obtained, aimed at improving the accuracy of the wafer temperature measured by the thermocouple. Published by Elsevier B.V.

引用

页码：29 / 34

页数：6

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