Effect of thermocouple position on temperature field in nitride MOCVD reactor

By using finite element methods, the distribution of temperature field is simulated in the vertical MOCVD reactor heated by induction. The temperature of thermocouple obtained from the experiment is consistent with that from the simulation. And the effect of the position of the thermocouple within the susceptor on the temperature in susceptor and wafer is analyzed in detail. It is found that the height of the thermocouple has little effect on the heating efficiency, but has strong influence on the wafer temperature measured by the thermocouple. The height of the thermocouple is optimized and the optimal position of the thermocouple in the susceptor is obtained, aimed at improving the accuracy of the wafer temperature measured by the thermocouple. Published by Elsevier B.V.