Impacts of antenna layout enhanced charging damage on MOSFET reliability and performance

The effects of antenna configuration, the electrically floating antenna and the electrically connected antenna to the substrate during the plasma processing, on the charging damage of MOSFETs have been studied. The floating antenna adjacent to the gate antenna increases the degradation of both Q(bd) and V-th. The adjacent diode antenna significantly increases the degradation of Q(bd) without increasing that of V-th. The diode antenna induced damage is enhanced with the increase of electrons injected from the gate antenna to the gate oxide in the bi-directional charging during the plasma processing. This phenomena is explained by a local decreasing of the antenna surface charging.