Dependence of efficiencies in GaN-based vertical blue light-emitting diodes on the thickness and doping concentration of the n-GaN layer

被引：27
作者：
Ryu, Han-Youl [1 ]
Jeon, Ki-Seong [2 ]
Kang, Min-Goo [2 ]
Choi, Yunho [2 ]
Lee, Jeong-Soo [2 ]
机构：
[1] Inha Univ, Dept Phys, Inchon 402751, South Korea
[2] LG Elect Adv Res Inst, Seoul 137724, South Korea
来源：
OPTICS EXPRESS | 2013年 / 21卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
EXTRACTION EFFICIENCY; OPTICAL-PROPERTIES; ABSORPTION; ENHANCEMENT; DROOP; LEDS;
D O I：
10.1364/OE.21.00A190
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are found to increase as the thickness or doping concentration increases due to the improvement of current spreading. On the contrary, the light extraction efficiency (LEE) decreases with increasing doping concentration or n-GaN thickness by the free-carrier absorption. By combining the results of EE, IQE, and LEE, wall-plug efficiency (WPE) of the vertical LED is calculated, and the optimum thickness and doping concentration of the n-GaN layer is found for obtaining the maximum WPE. (C) 2012 Optical Society of America
引用
收藏
页码：A190 / A200
页数：11
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