BEOL Integrated Ferroelectric HfO2-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions

被引：15

作者：

Alcala, R. ^{[1
]}

Materano, M. ^{[1
]}

Lomenzo, P. D. ^{[1
]}

Grenouillet, L. ^{[2
]}

Francois, T. ^{[2
]}

Coignus, J. ^{[2
]}

Vaxelaire, N. ^{[2
]}

Carabasse, C. ^{[2
]}

Chevalliez, S. ^{[2
]}

Andrieu, F. ^{[2
]}

Mikolajick, T. ^{[1
,3
]}

Schroeder, U. ^{[1
]}

机构：

[1] NaMLab gGmbH, D-01187 Dresden, Germany

[2] Univ Grenoble Alpes, LETI, CEA, F-38000 Grenoble, France

[3] Tech Univ Dresden, Inst Semicond & Microsyst, D-01187 Dresden, Germany

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2022年 / 10卷

关键词：

BEOL; ferroelectric; HfO2; reliability;

D O I：

10.1109/JEDS.2022.3198138

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si doped HfO2 based ferroelectric capacitors integrated into Back-End-Of-Line (BEOL) 130 nm CMOS technology were investigated in regard to critical reliability parameters for their implementation in non-volatile one-transistor one-capacitor ferroelectric random-access memory applications. The assessed reliability parameters are electric field, capacitor area, and temperature and are evaluated on single and parallel structured capacitors to understand their respective impact on wake-up, fatigue, imprint, and retention.

引用

收藏

页码：907 / 912

页数：6

相关论文

共 16 条

[1] BEOL Integrated Ferroelectric HfO2 based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions [J].

Alcala, R. ;

Materano, M. ;

Lomenzo, P. D. ;

Grenouillet, L. ;

Francois, T. ;

Coignus, J. ;

Vaxelaire, N. ;

Carabasse, C. ;

Chevalliez, S. ;

Andrieu, F. ;

Mikolajick, T. ;

Schroeder, U. .

6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022), 2022, :67-69

[2] Imprint issue during retention tests for HfO2-based FRAM: An industrial challenge? [J].

Bouaziz, J. ;

Romeo, P. Rojo ;

Baboux, N. ;

Vilquin, B. .

APPLIED PHYSICS LETTERS, 2021, 118 (08)

[3] Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices [J].

Chouprik, Anastasia ;

Kondratyuk, Ekaterina ;

Mikheev, Vitalii ;

Matveyev, Yury ;

Spiridonov, Maxim ;

Chernikova, Anna ;

Kozodaev, Maxim G. ;

Markeev, Andrey M. ;

Zenkevich, Andrei ;

Negrov, Dmitrii .

ACTA MATERIALIA, 2021, 204

[4]

Florent K, 2018, INT RELIAB PHY SYM

[5] Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors [J].

Francois, T. ;

Grenouillet, L. ;

Coignus, J. ;

Vaxelaire, N. ;

Carabasse, C. ;

Aussenac, F. ;

Chevalliez, S. ;

Slesazeck, S. ;

Richter, C. ;

Chiquet, P. ;

Bocquet, M. ;

Schroeder, U. ;

Mikolajick, T. ;

Gaillard, F. ;

Nowak, E. .

APPLIED PHYSICS LETTERS, 2021, 118 (06)

[6]

Francois T, 2019, INT EL DEVICES MEET, DOI [10.1109/IEDM19573.2019.8993485, 10.1109/iedm19573.2019.8993485]

[7]

Grenouillet L, 2020, S VLSI TECH, DOI [10.1109/vlsitechnology18217.2020.9265061, 10.1109/VLSITechnology18217.2020.9265061]

[8] Materials and production characterization requirements for the production of FRAM(R) memory products [J].

Hadnagy, TD .

INTEGRATED FERROELECTRICS, 1997, 18 (1-4) :1-17

[9] Interplay between oxygen defects and dopants: effect on structure and performance of HfO2-based ferroelectrics [J].

Materano, Monica ;

Lomenzo, Patrick D. ;

Kersch, Alfred ;

Park, Min Hyuk ;

Mikolajick, Thomas ;

Schroeder, Uwe .

INORGANIC CHEMISTRY FRONTIERS, 2021, 8 (10) :2650-2672

[10] FeRAM technology for high density applications [J].

Mikolajick, T ;

Dehm, C ;

Hartner, W ;

Kasko, I ;

Kastner, MJ ;

Nagel, N ;

Moert, M ;

Mazure, C .

MICROELECTRONICS RELIABILITY, 2001, 41 (07) :947-950