On the use of new generation mobile phone (smart phone) for retrospective accident dosimetry

被引：21

作者：

Lee, J. I. ^{[1
]}

Chang, I. ^{[1
]}

Pradhan, A. S. ^{[1
]}

Kim, J. L. ^{[1
]}

Kim, B. H. ^{[1
]}

Chung, K. S. ^{[2
,3
]}

机构：

[1] Korea Atom Energy Res Inst, Radiat Dosimetry Team, Yuseong, Daejeon, South Korea

[2] Gyeongsang Natl Univ, Res Inst Nat Sci, Jinju 660701, South Korea

[3] Gyeongsang Natl Univ, Dept Phys, Jinju 660701, South Korea

来源：

RADIATION PHYSICS AND CHEMISTRY | 2015年 / 116卷

关键词：

Optically stimulated luminescence; Retrospective dosimetry; Mobile phone; Smart phone; Electronic components; ELECTRONIC COMPONENTS;

D O I：

10.1016/j.radphyschem.2015.05.004

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Optically stimulated luminescence (OSL) characteristics of resistors, inductors and integrated-circuit (IC) chips, extracted from new generation smart phones, were investigated for the purpose of retrospective accident dosimetry. Inductor samples were found to exhibit OSL sensitivity about 5 times and 40 times higher than that of the resistors and the IC chips, respectively. On post-irradiation storage, the resistors exhibited a much higher OSL fading (about 80 % in 36 h as compared to the value 3 min after irradiation) than IC chips (about 20 % after 36 h) and inductors (about 50 % in 36 h). Higher OSL sensitivity, linear dose response (from 8.7 mGy up to 8.9 Gy) and acceptable fading make inductors more attractive for accident dosimetry than widely studied resistors. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：151 / 154

页数：4

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