Ion implantation of Cd and Ag into AlN and GaN

被引:11
作者
Miranda, S. M. C. [1 ]
Kessler, P. [2 ]
Correia, J. G. [1 ,3 ]
Vianden, R. [2 ]
Johnston, K. [4 ]
Alves, E. [1 ,3 ]
Lorenz, K. [1 ,3 ]
机构
[1] Inst Tecnol & Nucl, Estr Nacl 10, P-2686953 Sacavem, Portugal
[2] Univ Bonn, Helmholtz Inst Strahlen Kernphysik, D-53115 Bonn, Germany
[3] Centro Fis Nucl Univ Lisbo, P-1649003 Lisbon, Portugal
[4] Univ Saarland, Technische Phys, D-66041 Saarbrucken, Germany
来源
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期
关键词
III-nitrides; ion implantation; perturbed angular correlation; Rutherford backscattering/channelling; X-ray diffraction; SEMICONDUCTORS; TEMPERATURE;
D O I
10.1002/pssc.201100203
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
GaN and AlN thin films were implanted with cadmium (Cd) or silver (Ag), to fluences ranging from 1x10(13) to 1.7 x 10(15) at/cm(2). The implanted samples were annealed at 950 degrees C under flowing nitrogen. While implantation damage could be fully removed for the lowest fluences, for higher fluences the crystal quality was only partially recovered. For the high fluence samples the lattice site location of the ions was studied by Rutherford Backscattering/channelling (RBS/C). Cd ions are found to be incorporated in substitutional cation sites (Al or Ga) while Ag is slightly displaced from this position. To further investigate the incorporation sites, Perturbed Angular Correlation (PAC) measurements were performed and the electric field gradients at the site of the probe nuclei were determined. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:1060 / 1064
页数:5
相关论文
共 50 条
  • [41] Recombination processes in structures with GaN/AlN quantum dots
    Aleksandrov, I. A.
    Mansurov, V. G.
    Zhuravlev, K. S.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2016, 75 : 309 - 316
  • [42] Effects of Mn Ion Implantation on XPS Spectroscopy of GaN Thin Films
    Majid, Abdul
    Ahmad, Naeem
    Rizwan, Muhammad
    Khan, Salah Ud-Din
    Ali, Fekri Abdulraqeb Ahmed
    Zhu, Jianjun
    JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (02) : 1555 - 1559
  • [43] Effects of Mn Ion Implantation on XPS Spectroscopy of GaN Thin Films
    Abdul Majid
    Naeem Ahmad
    Muhammad Rizwan
    Salah Ud-Din Khan
    Fekri Abdulraqeb Ahmed Ali
    Jianjun Zhu
    Journal of Electronic Materials, 2018, 47 : 1555 - 1559
  • [44] The ethanol sensing property of magnetron sputtered ZnO thin films modified by Ag ion implantation
    Chen, Jiangtao
    Yan, Xingbin
    Liu, Wenwen
    Xue, Qunji
    SENSORS AND ACTUATORS B-CHEMICAL, 2011, 160 (01): : 1499 - 1503
  • [45] Raman Spectra Analysis of GaN : Er Films Prepared by Ion Implantation
    Tao Dong-yan
    Liu Chao
    Yin Chun-hai
    Zeng Yi-ping
    SPECTROSCOPY AND SPECTRAL ANALYSIS, 2013, 33 (03) : 699 - 703
  • [46] Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation
    Jacobs, Alan G.
    Feigelson, Boris N.
    Hite, Jennifer K.
    Gorsak, Cameron A.
    Luna, Lunet E.
    Anderson, Travis J.
    Kub, Francis J.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2020, 217 (07):
  • [47] Structural modifications of AlInN/GaN thin films by neon ion implantation
    Majid, Abdul
    Husnain, G.
    Usman, Muhammad
    Shakoor, Abdul
    Hassan, Najmul
    Zhu, J. J.
    PHYSICS LETTERS A, 2013, 377 (41) : 2986 - 2989
  • [48] Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
    Zhang, Yuhao
    Liu, Zhihong
    Tadjer, Marko J.
    Sun, Min
    Piedra, Daniel
    Hatem, Christopher
    Anderson, Travis J.
    Luna, Lunet E.
    Nath, Anindya
    Koehler, Andrew D.
    Okumura, Hironori
    Hu, Jie
    Zhang, Xu
    Gao, Xiang
    Feigelson, Boris N.
    Hobart, Karl D.
    Palacios, Tomas
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (08) : 1097 - 1100
  • [49] Lateral Schottky GaN rectifiers formed by Si+ ion implantation
    Irokawa, Y
    Kim, J
    Ren, F
    Baik, KH
    Gila, BP
    Abernathy, CR
    Pearton, SJ
    Pan, CC
    Chen, GT
    Chyi, JI
    JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (05) : 426 - 430
  • [50] Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al
    Taube, Andrzej
    Kaminska, Eliana
    Kozubal, Maciej
    Kaczmarski, Jakub
    Wojtasiak, Wojciech
    Jasinski, Jakub
    Borysiewicz, Michal A.
    Ekielski, Marek
    Juchniewicz, Marcin
    Grochowski, Jakub
    Mysliwiec, Marcin
    Dynowska, Elzbieta
    Barcz, Adam
    Prystawko, Pawel
    Zajac, Marcin
    Kucharski, Robert
    Piotrowska, Anna
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 212 (05): : 1162 - 1169