Design and Simulation of Wireless Power Transfer System for brain Implant

被引:0
|
作者
Ben Fadhel, Y. [1 ]
Ktata, S. [1 ]
Rahmani, S. [2 ]
Al-Haddad, K. [2 ]
机构
[1] Univ Tunis El Manar Tunis, ISTMT, Lab Biophys & Med Technol BMT, Av Dr Zouhaier Essafi, Tunis 1006, Tunisia
[2] Ecole Technol Super, CRC ECPE, 1100 Notre Dame, Montreal, PQ H3C 1K3, Canada
关键词
WPT; implant; wireless power transfer; Class-E power amplifier; resonance; inductive field;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
All over the world, there are great research efforts in order to improve human being's quality life, especially on medical and biomedical applications. Hence, one found several inventions in this area, among them Implantable Medical Devices Systems (IMDs) called also implants. Depending on the application, these devices have regrouped in two categories active and passive. Any time when IMDs are active, they require energy to function properly. Since 1958, several techniques have been proposed in order to address their need of power. Actually, a promising technique, called Near-Field Resonant Coupling (NFRC) is used for wirelessly charging modern implants. In this work, one designed a NFRC wireless power transfer system for powering brain implant. To simulate the system, one employed orCad software. The delivered power in the transmitter circuit is lWatt. Simulation results show that the system can transfer wirelessly 0.16 Whatt of power to the receiver circuit that can be employable to supply brain implant.
引用
收藏
页码:292 / 297
页数:6
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