Electrical fluctuations and photoinduced current transients in CdxHg1-xTe long wavelength epilayers

被引：11

作者：

Paul, N ^{[1
]}

Van Vliet, CM ^{[1
]}

Mergui, S ^{[1
]}

机构：

[1] Florida Int Univ, Ctr Engn & Appl Sci, Miami, FL 33174 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 12期

关键词：

D O I：

10.1063/1.370671

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurements are described of I-V characteristics, resistance versus T-1, noise spectra and photoresponse for frequencies of 10 Hz-1 MHz in the temperature range 300-50 K for cadmium-mercury telluride long-wavelength infrared detectors having 12 mu epitaxial layers on wide band gap material. The noise consists of 1/f noise and one or two Lorentzians, attributed to shallow hole traps, probably associated with Hg vacancies. The results are discussed and analyzed after a brief resume of generation-recombination noise. The photoinduced current transient spectroscopy response curves are attributed to tunneling to interface states. (C) 1999 American Institute of Physics. [S0021-8979(99)02012-5].

引用

页码：8287 / 8291

页数：5

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