High-Performance Visible-Near-Infrared Single-Walled Carbon Nanotube Photodetectors via Interfacial Charge-Transfer-Induced Improvement by Surface Doping

Single-walled carbon nanotubes (SWCNTs) are considered to be promising candidates for next-generation near-infrared (NIR) photodetectors due to their extraordinary electrical and optical properties. However, the low separation efficiency of photogenerated carriers limits the full utilization of the potential of pristine SWCNTs as photoactive materials. Herein, we report a novel high-performance visible-NIR SWCNT-based photodetector via interfacial charge-transfer-induced improvement by Au nano-particle (AuNP) surface doping. Under 1064 nm light illumination, the as-fabricated AuNP/SWCNT photodetector exhibits an excellent photoelectrical performance with a responsivity of 2.16 x 10(5) A/W and a high detectivity of 1.82 x 10(14) Jones, which is three orders of magnitude higher than that of the SWCNT photodetector under the same conditions. Importantly, the interfacial charge transfer between AuNPs and SWCNTs has been first investigated using Raman shift statistics at room temperature. Experimental results indicate that the interfacial charge transfer induced by AuNP doping can reduce the Fermi level of SWCNTs and effectively improve the generation and transport of photogenerated carriers, thereby enhancing the photoelectric performance of SWCNT-based photodetectors. We believe that our results not only demonstrate a facile route to improve the performance of SWCNT-based photodetectors but also provide a novel methodology to characterize the interfacial charge transfer between dopants and SWCNTs.