Imaging Current Distributions and Temperature Profiles in GaN HEMTs using Nitrogen Vacancy Centers in Nanodiamonds

被引：0
|
作者：
Foy, Christopher [1 ]
Bagnall, Kevin R. [1 ]
Trusheim, Matthew E. [1 ]
Lauri, Alberto [1 ]
Wang, Evelyn N. [1 ]
Englund, Dirk [1 ]
机构：
[1] MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA
来源：
2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2016年
关键词：
ALGAN/GAN HEMTS; THERMOMETRY; SPIN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate simultaneous wide-field (> 1000 mu m(2)) measurements of magnetic fields and temperature on GaN HEMTs using nitrogen vacancy centers in nanodiamonds. (C) 2016 Optical Society of America
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页数：2
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