Radiation effects on ohmic and Schottky contacts based on 4H and 6H-SiC

被引：15

作者：

Cinar, Kuebra ^{[1
]}

Coskun, Cevdet ^{[1
]}

Guer, Emre ^{[1
]}

Aydogan, Sakir ^{[1
]}

机构：

[1] Ataturk Univ, Fac Sci & Arts, Dept Phys, TR-25240 Erzurum, Turkey

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2009年 / 267卷 / 01期

关键词：

Ohmic contact; Schottky diode; Electron irradiation; 4H-SiC; 6H-SiC; VOLTAGE CHARACTERISTICS; SILICON-CARBIDE; IRRADIATION; TEMPERATURE; DIODES;

D O I：

10.1016/j.nimb.2008.10.087

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A systematic study of Ni based ohmic and Schottky contacts (SCs) onto the n-4H-SiC and n-6H-SiC under relatively low-dose (1 x 10(12) e(-) cm(-2)) and high-energy (6, 12, 15 MeV) electron irradiation (HEEI) has been introduced. Lower specific contact resistivity has been reached for Ni based ohmic contact structures on both 4H and 6H-SiC after each electron irradiation, This finding has been explained by the displacement damage produced by the collision of electrons with atoms of Ni contact material. It has been observed that the HEEI caused to increase in the ideality factors of both SCs indicating deviation from thermionic emission theory in current transport mechanism. While the Schottky barrier height (SBH) for Ni/4H-SiC SC remains nearly constant, an increase has been observed for the Ni/6H-SiC SC. Donor concentrations for both diodes have decreased with increasing electron energy probably due to the trapping effect of the irradiation induced defect(s). (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：87 / 90

页数：4

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