Microstructure, dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr0.25Ti0.75]O3 thin films

被引：89

作者：

Cavalcante, L. S. ^{[1
]}

Sczancoski, J. C. ^{[1
]}

De Vicente, F. S. ^{[2
]}

Frabbro, M. T. ^{[1
]}

Li, M. Siu ^{[2
]}

Varela, J. A. ^{[3
]}

Longo, E. ^{[3
]}

机构：

[1] DQ UFSCar, LIEC, BR-13565905 Sao Carlos, SP, Brazil

[2] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP, Brazil

[3] Univ Estadual Paulista, IQ, BR-14801907 Araraquara, SP, Brazil

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2009年 / 49卷 / 01期

基金：

巴西圣保罗研究基金会;

关键词：

Microstructure; Dielectric; Optical band gap; Photoluminescence; BZT thin films; TUNABILITY PROPERTIES; TEMPERATURE; TITANATE; LAYERS; BA(ZR0.20TI0.80)O-3; ABSORPTION; INTENSE;

D O I：

10.1007/s10971-008-1841-x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ba[Zr0.25Ti0.75]O-3 (BZT) thin films were synthesized by the complex polymerization method and heat treated at 400 A degrees C for different times and at 700 A degrees C for 2 h. These thin films were analyzed by X-ray diffraction (XRD), Fourier-transform infrared (FT-IR) spectroscopy, field emission gun-scanning electron microscopy (FEG-SEM) and atomic force microscopy (AFM), Ultraviolet-visible (UV-vis) absorption spectroscopy, electrical and photoluminescence (PL) measurements. FEG-SEM and AFM micrographs showed that the microstructure and thickness of BZT thin films can be influenced by the processing times. Dielectric constant and dielectric loss of BZT thin films heat treated at 700 A degrees C were approximately 148 and 0.08 at 1 MHz, respectively. UV-vis absorption spectra suggested the presence of intermediary energy levels (shallow and deep holes) within the band gap of BZT thin films. PL behavior was explained through the optical band gap values associated to the visible light emission components.

引用

页码：35 / 46

页数：12

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