Exciton condensation in the compressively strained SiGe layers of Si/SiGe/Si heterostructures

被引：5
作者：
Burbaev, T. M. [1 ]
Bagaev, V. S. [1 ]
Bobrik, E. A. [1 ]
Kurbatov, V. A. [1 ]
Novikov, A. V. [2 ]
Rzaev, M. M. [1 ]
Sibeldin, N. N. [1 ]
Schaeffler, F. [3 ]
Tsvetkov, V. A. [1 ]
Tarakanov, A. G. [1 ]
Zaitsev, V. V. [1 ]
机构：
[1] RAS, PN Lebedev Phys Inst, Moscow 119991, Russia
[2] Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
[3] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
来源：
THIN SOLID FILMS | 2008年 / 517卷 / 01期
关键词：
Photoluminescence; Silicon-germanium heterostructure; Electron-hole liquid; Mott transition;
D O I：
10.1016/j.tsf.2008.08.074
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photoluminescence spectra of type-I alignment Si/si(1-x)-(x)Ge(x)/Si heterostructures contained thin Si(1-x)Ge(x) layers (d=25-70 nm) are studied under various temperatures and excitation intensities. It was shown, excitation intensity increase at low temperatures leads to the exciton condensation resulting electron-hole liquid (EHL) formation in Si(1-x)Ge(x) layer. Electron-hole pair density no and binding energy of the EHL relative to exciton gas c decrease noticeably while x increases. The decrease in the binding energy and density of the electron-hole liquid is attributed to splitting of conduction and valance bands due to internal strains in the Si(1-x)Ge(x) layer. The Mott transition (from the exciton gas to electron-hole plasma) occurs above the critical temperatures for high excitation intensities. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：55 / 56
页数：2
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