Exciton condensation in the compressively strained SiGe layers of Si/SiGe/Si heterostructures

被引：5
作者：
Burbaev, T. M. [1 ]
Bagaev, V. S. [1 ]
Bobrik, E. A. [1 ]
Kurbatov, V. A. [1 ]
Novikov, A. V. [2 ]
Rzaev, M. M. [1 ]
Sibeldin, N. N. [1 ]
Schaeffler, F. [3 ]
Tsvetkov, V. A. [1 ]
Tarakanov, A. G. [1 ]
Zaitsev, V. V. [1 ]
机构：
[1] RAS, PN Lebedev Phys Inst, Moscow 119991, Russia
[2] Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
[3] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
来源：
THIN SOLID FILMS | 2008年 / 517卷 / 01期
关键词：
Photoluminescence; Silicon-germanium heterostructure; Electron-hole liquid; Mott transition;
D O I：
10.1016/j.tsf.2008.08.074
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photoluminescence spectra of type-I alignment Si/si(1-x)-(x)Ge(x)/Si heterostructures contained thin Si(1-x)Ge(x) layers (d=25-70 nm) are studied under various temperatures and excitation intensities. It was shown, excitation intensity increase at low temperatures leads to the exciton condensation resulting electron-hole liquid (EHL) formation in Si(1-x)Ge(x) layer. Electron-hole pair density no and binding energy of the EHL relative to exciton gas c decrease noticeably while x increases. The decrease in the binding energy and density of the electron-hole liquid is attributed to splitting of conduction and valance bands due to internal strains in the Si(1-x)Ge(x) layer. The Mott transition (from the exciton gas to electron-hole plasma) occurs above the critical temperatures for high excitation intensities. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：55 / 56
页数：2
相关论文
共 50 条
[21]   Condensation of excitons and the spectrum of multiparticle states in SiGe/Si quantum wells: The role of the barrier in the conduction band [J].
Bagaev, V. S. ;
Krivobok, V. S. ;
Nikolaev, S. N. ;
Onishchenko, E. E. ;
Skorikov, M. L. ;
Novikov, A. V. ;
Lobanov, D. N. .
JETP LETTERS, 2011, 94 (01) :63-67
[22]   Phase transitions in nonequilibrium electron-hole systems of Si/SiGe/Si nanoheterostructures [J].
Burbaev T.M. ;
Zaitsev V.V. ;
Kurbatov V.A. ;
Lobanov D.N. ;
Novikov A.V. ;
Rzaev M.M. ;
Sibel'din N.N. ;
Tsvetkov V.A. .
Bulletin of the Russian Academy of Sciences: Physics, 2009, 73 (01) :70-72
[23]   Structure and optical properties of Si and SiGe layers grown on SiO2 by chemical vapor deposition [J].
Shklyaev, A. A. ;
Vdovin, V. I. ;
Volodin, V. A. ;
Gulyaev, D. V. ;
Kozhukhov, A. S. ;
Sakuraba, M. ;
Murota, J. .
THIN SOLID FILMS, 2015, 579 :131-135
[24]   Excitonic luminescence of SiGe/Si quantum wells δ-doped with boron [J].
Bagaev, V. S. ;
Krivobok, V. S. ;
Nikolaev, S. N. ;
Novikov, A. V. ;
Onishchenko, E. E. ;
Pruchkina, A. A. .
JOURNAL OF APPLIED PHYSICS, 2015, 117 (18)
[25]   Structural and Optical properties of porous SiGe/Si Multilayer Films [J].
Zhou, Bi ;
Li, Xuemei ;
Pan, Shuwan ;
Chen, Songyan ;
Li, Cheng .
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), 2011, 34 (01) :1145-1149
[26]   Characterization of SiGe/Si Quantum Dot Grown by using APRPCVD [J].
Kim, T. S. ;
Jeong, M. R. ;
Mun, N. J. ;
Kil, Y. -H. ;
Kim, J. D. ;
Jeong, T. S. ;
Kang, S. ;
Kim, S. H. ;
Choi, C. -J. ;
Shim, K. H. .
ANALYTICAL TECHNIQUES FOR SEMICONDUCTOR MATERIALS AND PROCESS CHARACTERIZATION 6 (ALTECH 2009), 2009, 25 (03) :263-269
[27]   Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission [J].
Lockwood, David J. ;
Wu, Xiaohua ;
Baribeau, Jean-Marc ;
Mala, Selina A. ;
Wang, Xiaolu ;
Tsybeskov, Leonid .
FRONTIERS IN MATERIALS, 2016, 3
[28]   Si/SiGe valence band offset determination using photoluminescence and DLTS in SiGe quantum-well MOS capacitors [J].
Gamez-Cuatzin, H ;
Daami, A ;
Garchery, L ;
Sagnes, I ;
Campidelli, Y ;
Bremond, G .
MICROELECTRONIC ENGINEERING, 1998, 43-4 :669-676
[29]   Bandstructure analysis of strain compensated Si/SiGe quantum cascade structures [J].
Sigg, H ;
Falub, CV ;
Müller, E ;
Borak, A ;
Grützmacher, D ;
Fromherz, T ;
Meduna, M ;
Kermarrec, O .
OPTICAL MATERIALS, 2005, 27 (05) :841-845
[30]   Photoluminescence kinetics of a metastable SiGe/Si layer with ring microstructures on the surface [J].
Minnullin, A. N. ;
Shevtsov, S. V. .
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2015, 42 (10) :302-304
12345