Exciton condensation in the compressively strained SiGe layers of Si/SiGe/Si heterostructures

被引：5

作者：

Burbaev, T. M. ^{[1
]}

Bagaev, V. S. ^{[1
]}

Bobrik, E. A. ^{[1
]}

Kurbatov, V. A. ^{[1
]}

Novikov, A. V. ^{[2
]}

Rzaev, M. M. ^{[1
]}

Sibeldin, N. N. ^{[1
]}

Schaeffler, F. ^{[3
]}

Tsvetkov, V. A. ^{[1
]}

Tarakanov, A. G. ^{[1
]}

Zaitsev, V. V. ^{[1
]}

机构：

[1] RAS, PN Lebedev Phys Inst, Moscow 119991, Russia

[2] Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[3] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria

来源：

THIN SOLID FILMS | 2008年 / 517卷 / 01期

关键词：

Photoluminescence; Silicon-germanium heterostructure; Electron-hole liquid; Mott transition;

D O I：

10.1016/j.tsf.2008.08.074

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The photoluminescence spectra of type-I alignment Si/si(1-x)-(x)Ge(x)/Si heterostructures contained thin Si(1-x)Ge(x) layers (d=25-70 nm) are studied under various temperatures and excitation intensities. It was shown, excitation intensity increase at low temperatures leads to the exciton condensation resulting electron-hole liquid (EHL) formation in Si(1-x)Ge(x) layer. Electron-hole pair density no and binding energy of the EHL relative to exciton gas c decrease noticeably while x increases. The decrease in the binding energy and density of the electron-hole liquid is attributed to splitting of conduction and valance bands due to internal strains in the Si(1-x)Ge(x) layer. The Mott transition (from the exciton gas to electron-hole plasma) occurs above the critical temperatures for high excitation intensities. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：55 / 56

页数：2

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