Exploring the p-n junction region in Cu(In,Ga)Se2 thin-film solar cells at the nanometer-scale

被引：48

作者：

Cojocaru-Miredin, O. ^{[1
]}

Choi, P. ^{[1
]}

Wuerz, R. ^{[2
]}

Raabe, D. ^{[1
]}

机构：

[1] Max Planck Inst Eisenforsch GmbH, D-40237 Dusseldorf, Germany

[2] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 18期

关键词：

ATOM-PROBE; CUINSE2; CDS;

D O I：

10.1063/1.4764527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work we study the CdS/Cu(In,Ga)Se-2 p-n junction region in Cu(In,Ga)Se-2 thin-film solar cells using atom probe tomography. A Cu-, Ga-depleted, and Cd-doped region of about 1 nm thickness is detected at the Cu(In,Ga)Se-2 side of the CdS/Cu(In,Ga)Se-2 interface. Furthermore, Cd is also found to be enriched at Cu(In,Ga)Se-2 grain boundaries connected to the CdS layer. Na and O impurities decorate the CdS/CIGS interface, where Na-rich clusters are preferentially located in CdS regions abutting to Cu(In,Ga)Se-2 grain boundaries. The experimental findings of this work demonstrate the capability of atom probe tomography in studying buried interfaces and yield vital information for understanding and modeling the p-n junction band structure in Cu(In,Ga)Se-2 solar cells. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764527]

引用

页数：5

共 26 条

[1] Structural and chemical investigations of CBD- and PVD-CdS buffer layers and interfaces in Cu(In,Ga)Se2-based thin film solar cells [J].

Abou-Ras, D ;

Kostorz, G ;

Romeo, A ;

Rudmann, D ;

Tiwari, A .

THIN SOLID FILMS, 2005, 480 :118-123

[2]

[Anonymous], 2007, P 22 EUR PHOT SOL EN

[3]

Choi P., SURF INTERF IN PRESS

[4] Atomic-scale characterization of the CdS/CuInSe2 interface in thin-film solar cells [J].

Cojocaru-Miredin, O. ;

Choi, P. ;

Wuerz, R. ;

Raabe, D. .

APPLIED PHYSICS LETTERS, 2011, 98 (10)

[5] Interpretation of admittance, capacitance-voltage, and current-voltage signatures in Cu(In,Ga)Se2 thin film solar cells [J].

Eisenbarth, Tobias ;

Unold, Thomas ;

Caballero, Raquel ;

Kaufmann, Christian A. ;

Schock, Hans-Werner .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (03)

[6] Design of a femtosecond laser assisted tomographic atom probe [J].

Gault, B ;

Vurpillot, F ;

Vella, A ;

Gilbert, M ;

Menand, A ;

Blavette, D ;

Deconihout, B .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2006, 77 (04)

[7]

Hellman OC, 2000, MICROSC MICROANAL, V6, P437, DOI 10.1007/s100050010051

[8] Localization of Na impurities at the buried CdS/Cu(In, Ga)Se2 heterojunction [J].

Heske, C ;

Eich, D ;

Fink, R ;

Umbach, E ;

Kakar, S ;

van Buuren, T ;

Bostedt, C ;

Terminello, LJ ;

Grush, MM ;

Callcott, TA ;

Himpsel, FJ ;

Ederer, DL ;

Perera, RCC ;

Riedl, W ;

Karg, F .

APPLIED PHYSICS LETTERS, 1999, 75 (14) :2082-2084

[9] New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20% [J].

Jackson, Philip ;

Hariskos, Dimitrios ;

Lotter, Erwin ;

Paetel, Stefan ;

Wuerz, Roland ;

Menner, Richard ;

Wischmann, Wiltraud ;

Powalla, Michael .

PROGRESS IN PHOTOVOLTAICS, 2011, 19 (07) :894-897

[10] Defect-induced nonpolar-to-polar transition at the surface of chalcopyrite semiconductors [J].

Jaffe, JE ;

Zunger, A .

PHYSICAL REVIEW B, 2001, 64 (24)

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