Long silicon nitride nanowires synthesized in a simple route

被引：26

作者：

Li, Gong-Yi ^{[1
]}

Li, Xiao-Dong ^{[1
]}

Wang, Hao ^{[1
]}

Li, Zhong-Quan ^{[2
]}

机构：

[1] Natl Univ Def Technol, Coll Aerosp & Mat Engn, State Key Lab Adv Ceram Fibers & Composites, Changsha 410073, Hunan, Peoples R China

[2] Hunan Taixin Ceram Co Ltd, Liling 412200, Hunan, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2008年 / 93卷 / 02期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1007/s00339-008-4808-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Long silicon nitride (Si3N4) nanowires with high purity were synthesized by heating mixtures of SiO2 powders and short carbon fibers at 1430 degrees C for 2 h in a flowing N-2 atmosphere. The nanowires had the length of 1-2 millimeters and the diameters of 70-300 nm, and were mainly composed of alpha-Si3N4, growing along the [001] direction. The vapor-solid (VS) mechanism was employed to interpret the nanowires growth.

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页码：471 / 475

页数：5

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