Effect of O2 plasma treatment on density-of-states in a-IGZO thin film transistors

被引：19

作者：

Ding, Xingwei ^{[1
,2
]}

Huang, Fei ^{[1
,3
]}

Li, Sheng ^{[1
,2
]}

Zhang, Jianhua ^{[1
,2
]}

Jiang, Xueyin ^{[3
]}

Zhang, Zhilin ^{[1
,3
]}

机构：

[1] Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China

[2] Shanghai Univ, Sch Mechatron & Automat, Shanghai 200072, Peoples R China

[3] Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China

来源：

ELECTRONIC MATERIALS LETTERS | 2017年 / 13卷 / 01期

基金：

中国国家自然科学基金;

关键词：

thin film transistors; oxygen plasma treatment; density-of-states; a-IGZO; SUBTHRESHOLD LEAKAGE CURRENT; GATE INSULATORS; TEMPERATURE; PERFORMANCE; LAYER;

D O I：

10.1007/s13391-017-6214-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work reports an efficient route for enhancing the performance of amorphous InGaZnO (a-IGZO) thin film transistors (TFT). The mobility was greatly improved by about 38% by means of O-2 plasma treatment. Temperature-stress was carried out to investigate the stability and extract the parameters related to activation energy (E (a)) and density-of-states (DOS). The DOS was calculated on the basis of the experimentally obtained E (a), which can explain the experimental observation. A lower activation energy (E (a), similar to 0.72 eV) and a smaller DOS were obtained in the O-2 plasma treatment TFT based on the temperature-dependent transfer curves. The results showed that temperature stability and electrical properties enhancements in a-IGZO thin film transistors were attributed to the smaller DOS.

引用

页码：45 / 50

页数：6

共 30 条

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