Tunable Electronic Transport Properties of Metal-Cluster-Decorated III-V Nanowire Transistors

被引：67

作者：

Han, Ning ^{[1
,2
,3
]}

Wang, Fengyun ^{[1
,2
,3
]}

Hou, Jared J. ^{[1
,2
,3
]}

Yip, Sen Po ^{[1
,2
,3
]}

Lin, Hao ^{[1
,2
]}

Xiu, Fei ^{[1
,2
,3
]}

Fang, Ming ^{[1
,2
]}

Yang, Zaixing ^{[1
,2
]}

Shi, Xiaoling ^{[1
,2
]}

Dong, Guofa ^{[1
,2
]}

Hung, Tak Fu ^{[1
,2
]}

Ho, Johnny C. ^{[1
,2
,3
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

[2] City Univ Hong Kong, CFP, Kowloon, Hong Kong, Peoples R China

[3] City Univ Hong Kong, Shenzhen Res Inst, Shenzhen, Peoples R China

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 32期

基金：

美国国家科学基金会; 中国国家自然科学基金;

关键词：

contact printing; metal decoration; III-V nanowire field-effect transistors; n-channel metal-oxide-semiconductor (NMOS); inverters; threshold voltage modulation; ELECTRICAL-PROPERTIES; ZNO NANOWIRE; INAS; ENHANCEMENT; MOBILITY; PASSIVATION; GROWTH;

D O I：

10.1002/adma.201301362

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：4445 / 4451

页数：7

共 38 条

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