Nanoscale leakage current measurements in metal organic chemical vapor deposition crystalline SrTiO3 films

被引:15
作者
Rozier, Y. [1 ]
Gautier, B. [1 ]
Hyvert, G. [1 ]
Descamps, A. [1 ]
Plossu, C. [1 ]
Dubourdieu, C. [2 ]
Ducroquet, F. [3 ]
机构
[1] Inst Natl Sci Appl, CNRS, UNR5270, Lyon Inst Nonotechnol, F-69621 Villeurbanne, France
[2] INPG, CNRS, Mat & Genie Phys Lab, F-38016 Grenoble 1, France
[3] IMEP, F-38016 Grenoble 1, France
关键词
SrTiO3; Atomic force microscopy; Chemical vapor deposition; Electrical properties and measurements; Oxides; ATOMIC-FORCE MICROSCOPY; LIQUID-INJECTION MOCVD; ELECTRICAL CHARACTERIZATION; NANOMETER-SCALE; FAILURE ANALYSIS; C-AFM; SILICON; OXIDES; DIELECTRICS; CAPACITORS;
D O I
10.1016/j.tsf.2008.08.193
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The properties of SrTiO3 thin films, grown by liquid injection metal organic chemical vapor deposition on Si/SiO2, using a mixture of precursors, have been investigated at the nanoscale using an Atomic Force Microscope in the so-called Conductive Atomic Force Microscopy mode. Maps of the leakage currents with a nanometric resolution have been obtained on films elaborated at different temperatures and stoichiometries in order to discriminate the role of each parameter on the onset of leakage Currents in the resulting layers. it appears that the higher the deposition temperature, the higher the leakage currents of the films. The mapping with a nanometric precision allows to show a heterogeneous behaviour of the surface with leaky grains and insulating boundaries. The study of films elaborated at the same temperature with different compositions supports the assumption that the leakage currents on Ti-rich layers are far higher than on Sr-rich layers. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:1868 / 1873
页数:6
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