Atomic layer deposition of TiO2 from TiCl4 and O3

被引：66
作者：
Aarik, Lauri [1 ]
Arroval, Tonis [1 ]
Rammula, Raul [1 ]
Maendar, Hugo [1 ]
Sammelselg, Vaino [1 ,2 ]
Aarik, Jaan [1 ]
机构：
[1] Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia
[2] Univ Tartu, Inst Chem, EE-50411 Tartu, Estonia
来源：
THIN SOLID FILMS | 2013年 / 542卷
关键词：
Atomic layer deposition; Titanium dioxide; Crystallization; Surface morpholgy; Ozoone; Titanium chloride; TRANSMISSION ELECTRON-MICROSCOPY; THIN-FILMS; TITANIUM-DIOXIDE; IN-SITU; MASS-SPECTROMETRY; STAINLESS-STEEL; RU ELECTRODE; GROWTH; OXIDE; TII4;
D O I：
10.1016/j.tsf.2013.06.074
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Atomic layer deposition (ALD) of thin films from TiCl4 and O-3 on Si(100) substrates was investigated. The growth of TiO2 was obtained at substrate temperatures of 225-600 degrees C from these hydrogen-free precursors. Formation of anatase phase in the films was observed at 250-600 degrees C. In addition, the rutile phase was revealed in thicker films deposited at 600 degrees C. Compared to the well studied TiCl4-H2O ALD process the TiCl4-O-3 process allowed higher growth rate at 275-600 degrees C. In addition, relatively low surface roughness was obtained for thicker (>50 nm) films of the anatase structure deposited from TiCl4 and O-3 at 350-400 degrees C. Therefore TiCl4 and O-3 appeared to be a good precursor combination for ALD of TiO2, particularly for applications that require low concentration of hydrogen contamination. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：100 / 107
页数：8
相关论文
共 54 条
[1]   Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films [J].
Aarik, J ;
Aidla, A ;
Kiisler, AA ;
Uustare, T ;
Sammelselg, V .
THIN SOLID FILMS, 1999, 340 (1-2) :110-116
[2]   Titanium isopropoxide as a precursor for atomic layer deposition:: characterization of titanium dioxide growth process [J].
Aarik, J ;
Aidla, A ;
Uustare, T ;
Ritala, M ;
Leskelä, M .
APPLIED SURFACE SCIENCE, 2000, 161 (3-4) :385-395
[3]   MORPHOLOGY AND STRUCTURE OF TIO2 THIN-FILMS GROWN BY ATOMIC LAYER DEPOSITION [J].
AARIK, J ;
AIDLA, A ;
UUSTARE, T ;
SAMMELSELG, V .
JOURNAL OF CRYSTAL GROWTH, 1995, 148 (03) :268-275
[4]   Effects of precursors on nucleation in atomic layer deposition of HfO2 [J].
Aarik, J ;
Aidla, A ;
Kikas, A ;
Käämbre, T ;
Rammula, R ;
Ritslaid, P ;
Uustare, T ;
Sammelselg, V .
APPLIED SURFACE SCIENCE, 2004, 230 (1-4) :292-300
[5]   Atomic layer deposition of TiO2 thin films from TiI4 and H2O [J].
Aarik, J ;
Aidla, A ;
Uustare, T ;
Kukli, K ;
Sammelselg, V ;
Ritala, M ;
Leskelä, M .
APPLIED SURFACE SCIENCE, 2002, 193 (1-4) :277-286
[6]   Atomic layer growth of epitaxial TiO2 thin films from TiCl4 and H2O on α-Al2O3 substrates [J].
Aarik, J ;
Aidla, A ;
Mändar, H ;
Uustare, T ;
Schuisky, M ;
Hårsta, A .
JOURNAL OF CRYSTAL GROWTH, 2002, 242 (1-2) :189-198
[7]   Growth kinetics and structure formation of ZrO2 thin films in chloride-based atomic layer deposition process [J].
Aarik, J ;
Aidla, A ;
Mändar, H ;
Uustare, T ;
Sammelselg, V .
THIN SOLID FILMS, 2002, 408 (1-2) :97-103
[8]   Influence of structure development on atomic layer deposition of TiO2 thin films [J].
Aarik, J ;
Karlis, J ;
Mändar, H ;
Uustare, T ;
Sammelselg, V .
APPLIED SURFACE SCIENCE, 2001, 181 (3-4) :339-348
[9]   Atomic layer deposition of titanium dioxide from TiCl4 and H2O:: investigation of growth mechanism [J].
Aarik, J ;
Aidla, A ;
Mändar, H ;
Uustare, T .
APPLIED SURFACE SCIENCE, 2001, 172 (1-2) :148-158
[10]   Anomalous effect of temperature on atomic layer deposition of titanium dioxide [J].
Aarik, J ;
Aidla, A ;
Mändar, H ;
Sammelselg, V .
JOURNAL OF CRYSTAL GROWTH, 2000, 220 (04) :531-537
123456