Optical nutation in semiconductor quantum wells with multiple valence bands

被引：0

作者：

Kapoor, S ^{[1
]}

Sen, P ^{[1
]}

Sen, PK ^{[1
]}

机构：

[1] Shri G S Inst Technol & Sci, Dept Appl Phys, Indore 452003, India

来源：

PHOTONICS 2000: INTERNATIONAL CONFERENCE ON FIBER OPTICS AND PHOTONICS | 2001年 / 4417卷

关键词：

semiconductors; quantum wells; coherent transients; optical nutation; Stark splitting; multiple valence bands;

D O I：

10.1117/12.441311

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have studied optical nutation and Stark splitting in a GaAs/AlGaAs quantum well with multiple valence band structure using effective semiconductor Bloch equations. The individual roles of light and heavy holes in optical nutation have been examined. The analysis shows that both Rabi oscillation frequency and Stark splitting increase with rising electric field strength as observed experimentally. Also it is seen that light hole species dominates over heavy hole species in the transmission characteristics of quantum wells.

引用

页码：303 / 311

页数：9

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