Effect of plasma treatments on ultra low-k material properties

被引：25

作者：

Humbert, A

Mage, L

Goldberg, C

Junker, K

Proenca, L

Lhuillier, JB

机构：

[1] Philips Semicond, F-38926 Crolles, France

[2] Freescale Semicond, F-38926 Crolles, France

[3] Appl Mat Inc, F-38246 Meylan, France

[4] Freescale Semicond, Austin, TX 78721 USA

[5] STMicroelect, F-38926 Crolles, France

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 82卷 / 3-4期

关键词：

low k; plasma treatment; porous; adhesion; interface;

D O I：

10.1016/j.mee.2005.07.022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The physical properties and stability of surface modified PECVD SiOC(H) ultra low k (ULK) films were studied. Various stacks exposed to different plasma treatments, such as H-2-, NH3-, He- and O-2-based chemistry, were evaluated. Ellipsometric measurements, TOF-SIMS analysis, FTIR spectroscopy, adhesion tests and dielectric constant measurement were performed to evaluate the impact of each process on the ULK properties and to determine the best plasma treatments to apply. Mechanisms are proposed to explain the mode of both adhesion and compositional modification. Treatments were identified which enhance adhesion without degrading the dielectric constant integrity, thereby enabling the ULK integration for C065 technologies and beyond. (c) 2005 Published by Elsevier B.V.

引用

页码：399 / 404

页数：6

共 9 条

[1] Surface modification on low dielectric constant material - methylsilsesquioxane [J].