N-doping effects on the oxygen sensing of TiO2 films

被引:7
作者
Buono, C. [1 ]
Desimone, M. [1 ]
Schipani, F. [1 ]
Aldao, C. M. [1 ]
Vignatti, C. I. [2 ]
Morgade, C. I. N. [3 ,4 ]
Cabeza, G. F. [4 ]
Garetto, T. F. [2 ]
机构
[1] Univ Nacl Mar Plata CONICET, Inst Invest Ciencia & Tecnol Mat INTEMA, Juan B Justo 4302,B7608FDQ, Mar Del Plata, Buenos Aires, Argentina
[2] CCT CONICET Santa Fe, UNL CONICET, GICIC, INCAPE, Colectora Ruta Nac 168,Km 0, RA-3000 Santa Fe, Argentina
[3] Univ Tecnol Nacl, 11 Abril 461,B8000LMI, Bahia Blanca, Buenos Aires, Argentina
[4] Univ Nacl Sur, CONICET, Grp Mat & Sistemas Catalit, Inst Fis Sur IFISUR,Dept Fis, Ave Alem 1253,B8000CPB, Bahia Blanca, Buenos Aires, Argentina
关键词
Polycrystalline semiconductors; Electrical conduction; Intergranular barriers; Tunneling; GAS SENSORS; THIN-FILMS; TITANIUM-DIOXIDE; CARBON-MONOXIDE; ANATASE; OXIDE; STABILITY;
D O I
10.1007/s10832-017-0100-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Gas sensors based on Titanium dioxide films have been a subject of interest due to its high sensitivity and low cost. The sensing mechanism of this type of sensors is based on the conduction mechanism, which is governed by the potential barriers formed at the inter-grains of the polycrystalline structure. The shape of these potential barriers strongly depends on the characteristics of the material, and then it is expected that a doping aggregation will affect significantly the conductivity and thus the sensitivity of the sensor. In this work, we study the effect in the oxygen sensitivity of titanium dioxide films due to N-doping. We developed a model in order to explain our experimental results based on the fact that, for the particle size of our titanium dioxide samples, grains are completely depleted of carriers.
引用
收藏
页码:72 / 77
页数:6
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