Vacancy segregation at surface grain boundaries and their intersection:: an atomistic study

被引:10
作者
Creuze, J
Berthier, F
Tétot, R
Legrand, B
机构
[1] UPZI, LEMHE, UMR 8647, FR-91405 Orsay, France
[2] CEA Saclay, SRMP, DECM, FR-91191 Gif Sur Yvette, France
来源
DIFFUSIONS IN MATERIALS: DIMAT2000, PTS 1 & 2 | 2001年 / 194-1卷
关键词
grain boundary diffusion; grain boundary grooving; grain boundary segregation; surface diffusion; surface segregation; vacancy formation energy;
D O I
10.4028/www.scientific.net/DDF.194-199.1217
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The vacancy formation energy is calculated with an N-body interatomic potential for copper at different interfaces - the (001) surface and the Sigma =5 (310) < 001 > tilt grain boundary - and at the emergence of this grain boundary at the (001) surface. The formation energy at the surface and for some sites of the grain boundary is about half of the formation energy in the bulk, E-vac.bulk(for), whereas it can be as low as 0.1 E-vac.bulk(for) at the emergence of the grain boundary at the surface. These results are discussed along the main driving forces evidenced for the chemical interfacial segregation.
引用
收藏
页码:1217 / 1222
页数:6
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