A Simple Low Cost Monolithic Transformer for High-Voltage Gate Driver Applications

被引：12

作者：

Peng, Lulu ^{[1
]}

Wu, Rongxiang ^{[2
]}

Fang, Xiangming ^{[1
]}

Toyoda, Yoshiaki ^{[3
]}

Akahane, Masashi ^{[3
]}

Yamaji, Masaharu ^{[3
]}

Sumida, Hitoshi ^{[3
]}

Sin, Johnny K. O. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[3] Fuji Elect Co Ltd, Dept Semicond Device Dev, Matsumoto, Nagano 3900821, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 01期

关键词：

Monolithic transformer; 3D TSV transformer; high-voltage isolation; digital isolator;

D O I：

10.1109/LED.2013.2291785

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple low cost monolithic 3D through-silicon-via coreless transformer is designed and fabricated for high-voltage gate driver applications. The transformer comprises the primary coil embedded in the bottom layer of a Si substrate and the secondary coil built on the front-side of the substrate. Compared with conventional transformers with both coils built on the front-side or at the backside, the proposed structure has the advantages of area-saving and cost-effectiveness. A coreless transformer with primary, secondary, and mutual inductances of 260, 280, and 112 nH, respectively, is fabricated in a small area of 2 mm(2). It achieves both high galvanic isolation (>4 kV) and satisfactory voltage gain (0.41 from 4 to 45 MHz).

引用

页码：108 / 110

页数：3

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