Design and performance of an InGaAs-InP single-photon avalanche diode detector

被引：129

作者：

Pellegrini, S ^{[1
]}

Warburton, RE

Tan, LJJ

Ng, JS

Krysa, AB

Groom, K

David, JPR

Cova, S

Robertson, MJ

Buller, GS

机构：

[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[3] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2006年 / 42卷 / 3-4期

基金：

英国工程与自然科学研究理事会;

关键词：

avalanche breakdown; avalanche photodiodes (APDs); photodetectors; photodiodes;

D O I：

10.1109/JQE.2006.871067

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 urn. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.

引用

页码：397 / 403

页数：7

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