Microwave studies of weak localization and antilocalization in epitaxial graphene

被引：1

作者：

Drabinska, Aneta ^{[1
]}

Wolos, Agnieszka ^{[1
,2
]}

Kaminska, Maria ^{[1
]}

Strupinski, Wlodek ^{[3
]}

Baranowski, J. M. ^{[1
,3
]}

机构：

[1] Univ Warsaw, Fac Phys, Ul Hoza 69, PL-00681 Warsaw, Poland

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

来源：

PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷

关键词：

Graphene; weak localization; contactless transport;

D O I：

10.1063/1.4848334

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A microwave detection method was applied to study weak localization and antilocalization in epitaxial graphene sheets grown on both polarities of SiC substrates. Both coherence and scattering length values were obtained. The scattering lengths were found to be smaller for graphene grown on C-face of SiC. The decoherence rate was found to depend linearly on temperature, showing the electron-electron scattering mechanism.

引用

页码：159 / +

页数：2

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